Infineon Technologies AGIPB60R125C6ATMA1MOSFETs
IPB60R125C6ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 30A 3-Pin(2+Tab) D2PAK T/R - Arrow.com
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| CoolMOS | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 30 | |
| 125@10V | |
| 96@10V | |
| 96 | |
| 2127@100V | |
| 219000 | |
| 7 | |
| 12 | |
| 83 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 110@10V | |
| Mounting | Surface Mount |
| Package Height | 4.57(Max) mm |
| Package Width | 9.45(Max) mm |
| Package Length | 10.31(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Make an effective common gate amplifier using this IPB60R125C6ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 219000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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