Reduced Price
Infineon Technologies AGBSO200P03SHXUMA1MOSFET
Trans MOSFET P-CH 30V 7.4A 8-Pin DSO T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 7.4 | |
| 20@10V | |
| 40@10V | |
| 40 | |
| 1750@25V | |
| 2360 | |
| 33 | |
| 11 | |
| 42 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.65(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | DSO |
| 8 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this BSO200P03SHXUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 15600 mW. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.