Reduced Price
Infineon Technologies AGBSO200P03SHXUMA1MOSFETs
Trans MOSFET P-CH 30V 7.4A 8-Pin DSO T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 7.4 | |
| 20@10V | |
| 40@10V | |
| 40 | |
| 1750@25V | |
| 2360 | |
| 33 | |
| 11 | |
| 42 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.65(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | DSO |
| 8 | |
| Lead Shape | Gull-wing |
Create an effective common drain amplifier using this BSO200P03SHXUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 15600 mW. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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