Infineon Technologies AGBSC440N10NS3GATMA1MOSFET
Trans MOSFET N-CH 100V 5.3A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 5.3 | |
| 44@10V | |
| 8.1@10V | |
| 8.1 | |
| 610@50V | |
| 29000 | |
| 3 | |
| 3 | |
| 13 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 38@10V|48.3@6V | |
| 72 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Use Infineon Technologies' BSC440N10NS3GATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 29000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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