Infineon Technologies AGBSC440N10NS3GATMA1MOSFETs
Trans MOSFET N-CH 100V 5.3A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 5.3 | |
| 44@10V | |
| 8.1@10V | |
| 8.1 | |
| 610@50V | |
| 29000 | |
| 3 | |
| 3 | |
| 13 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 38@10V|48.3@6V | |
| 72 | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 5.9 mm |
| Package Length | 5.15 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| 8 | |
| Lead Shape | No Lead |
Use Infineon Technologies' BSC440N10NS3GATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 29000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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