Infineon Technologies AGBSC190N15NS3GATMA1MOSFET
Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 50 | |
| 100 | |
| 1 | |
| 19@10V | |
| 23@10V | |
| 23 | |
| 4 | |
| 10 | |
| 385 | |
| 9 | |
| 1820@75V | |
| 5@75V | |
| 2 | |
| 214 | |
| 125000 | |
| 6 | |
| 53 | |
| 25 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 16@8V|16@10V | |
| 200 | |
| 50 | |
| 1 | |
| 5.7 | |
| 130 | |
| 1.2 | |
| 3 | |
| 20 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' BSC190N15NS3GATMA1 power MOSFET is for you. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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