Infineon Technologies AGBSC190N15NS3GATMA1MOSFETs
Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 50 | |
| 100 | |
| 1 | |
| 19@10V | |
| 23@10V | |
| 23 | |
| 4 | |
| 10 | |
| 385 | |
| 9 | |
| 1820@75V | |
| 5@75V | |
| 2 | |
| 214 | |
| 125000 | |
| 6 | |
| 53 | |
| 25 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 16@8V|16@10V | |
| 200 | |
| 50 | |
| 1 | |
| 5.7 | |
| 130 | |
| 1.2 | |
| 3 | |
| 20 | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 5.9 mm |
| Package Length | 5.15 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| 8 | |
| Lead Shape | No Lead |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' BSC190N15NS3GATMA1 power MOSFET is for you. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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