Infineon Technologies AGBSC097N06NSATMA1MOSFET
Trans MOSFET N-CH 60V 13A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| BSC097N06NSATMA1 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 200nm | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| 20 | |
| 3.3 | |
| -55 to 175 | |
| 13 | |
| 100 | |
| 1 | |
| 9.7@10V | |
| 12@10V | |
| 12 | |
| 2.6 | |
| 4.5 | |
| 30 | |
| 4.7 | |
| 860@30V | |
| 16@30V | |
| 2.1 | |
| 210 | |
| 3000 | |
| 2 | |
| 2 | |
| 10 | |
| 6 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 8@10V|12@6V | |
| 3 | |
| 192 | |
| 50 | |
| 1 | |
| 5.2 | |
| 33 | |
| 1.2 | |
| 2.8 | |
| 1.7 | |
| 20 | |
| 13 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Make an effective common gate amplifier using this BSC097N06NSATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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