Infineon Technologies AGBSC082N10LSGATMA1MOSFET
Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 13.8 | |
| 8.2@10V | |
| 78@10V | |
| 78 | |
| 5600@50V | |
| 156000 | |
| 12 | |
| 24 | |
| 53 | |
| 19 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 400 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' BSC082N10LSGATMA1 power MOSFET is for you. Its maximum power dissipation is 156000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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