Infineon Technologies AGBSC082N10LSGATMA1MOSFETs
Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 13.8 | |
| 8.2@10V | |
| 78@10V | |
| 78 | |
| 5600@50V | |
| 156000 | |
| 12 | |
| 24 | |
| 53 | |
| 19 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 400 | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 5.9 mm |
| Package Length | 5.15 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| 8 | |
| Lead Shape | No Lead |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' BSC082N10LSGATMA1 power MOSFET is for you. Its maximum power dissipation is 156000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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