Infineon Technologies AGBSC052N08NS5ATMA1MOSFET
Trans MOSFET N-CH 80V 95A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| 20 | |
| 3.8 | |
| -55 to 150 | |
| 95 | |
| 100 | |
| 1 | |
| 5.2@10V | |
| 32@10V | |
| 32 | |
| 2200@40V | |
| 2500 | |
| 5 | |
| 7 | |
| 19 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4.4@10V|6.3@6V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' BSC052N08NS5ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes optimos 5 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.