Infineon Technologies AGBSC052N08NS5ATMA1MOSFETs
Trans MOSFET N-CH 80V 95A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| 20 | |
| 3.8 | |
| -55 to 150 | |
| 95 | |
| 100 | |
| 1 | |
| 5.2@10V | |
| 32@10V | |
| 32 | |
| 2200@40V | |
| 2500 | |
| 5 | |
| 7 | |
| 19 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4.4@10V|6.3@6V | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 5.9 mm |
| Package Length | 5.15 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| 8 | |
| Lead Shape | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' BSC052N08NS5ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes optimos 5 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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