Infineon Technologies AGBSC022N04LSATMA1MOSFET
Trans MOSFET N-CH 40V 25A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| 20 | |
| 2 | |
| 25 | |
| 100 | |
| 1 | |
| 2.2@10V | |
| 19@4.5V|37@10V | |
| 37 | |
| 2600@20V | |
| 2500 | |
| 5 | |
| 6.8 | |
| 26 | |
| 6.1 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.8@10V|2.3@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 |
This BSC022N04LSATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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