Infineon Technologies AGBSC022N04LSATMA1MOSFETs
Trans MOSFET N-CH 40V 25A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| 20 | |
| 2 | |
| 25 | |
| 100 | |
| 1 | |
| 2.2@10V | |
| 19@4.5V|37@10V | |
| 37 | |
| 2600@20V | |
| 2500 | |
| 5 | |
| 6.8 | |
| 26 | |
| 6.1 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.8@10V|2.3@4.5V | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 5.9 mm |
| Package Length | 5.15 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| 8 |
This BSC022N04LSATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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