Infineon Technologies AGBSC016N06NSATMA1MOSFET
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| 20 | |
| 3.3 | |
| -55 to 175 | |
| 31 | |
| 100 | |
| 1 | |
| 1.6@10V | |
| 71@10V | |
| 71 | |
| 13 | |
| 22 | |
| 78 | |
| 21 | |
| 5200@30V | |
| 48@30V | |
| 2.1 | |
| 1200 | |
| 3000 | |
| 9 | |
| 9 | |
| 35 | |
| 19 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 1.4@10V|1.9@6V | |
| 3 | |
| 936 | |
| 50 | |
| 0.9 | |
| 4.3 | |
| 61 | |
| 1.2 | |
| 2.8 | |
| 2.9 | |
| 20 | |
| 31 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 6 |
| Longueur du paquet | 5 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The BSC016N06NSATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.