Infineon Technologies AGBSC016N06NSATMA1MOSFETs

Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R

Looking for a component that can both amplify and switch between signals within your circuit? The BSC016N06NSATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology.

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