Infineon Technologies AGBSC014N06NSATMA1MOSFET
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3.3 | |
| 31 | |
| 1.45@10V | |
| 89@10V | |
| 89 | |
| 6500@30V | |
| 3000 | |
| 11 | |
| 10 | |
| 43 | |
| 23 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 1.2@10V|1.6@6V | |
| 1028 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 6 |
| Longueur du paquet | 5 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Use Infineon Technologies' BSC014N06NSATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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