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BSC014N06NSATMA1|INFINEON|limage
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MOSFETs

BSC014N06NSATMA1

Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R

Infineon Technologies AG
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant with Exemption
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • 美国海关商品代码
    COMPONENTS
  • SVHC
    Yes
  • SVHC超标
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    3.3
  • Maximum Continuous Drain Current (A)
    31
  • Maximum Drain-Source Resistance (mOhm)
    1.45@10V
  • Typical Gate Charge @ Vgs (nC)
    89@10V
  • Typical Gate Charge @ 10V (nC)
    89
  • Typical Input Capacitance @ Vds (pF)
    6500@30V
  • Maximum Power Dissipation (mW)
    3000
  • Typical Fall Time (ns)
    11
  • Typical Rise Time (ns)
    10
  • Typical Turn-Off Delay Time (ns)
    43
  • Typical Turn-On Delay Time (ns)
    23
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    1.2@10V|1.6@6V
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    1028
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    6
  • Package Length
    5
  • PCB changed
    8
  • Standard Package Name
    SON
  • Supplier Package
    TDSON EP
  • Pin Count
    8
  • Lead Shape
    No Lead

文档和资源

数据表
设计资源