Infineon Technologies AGBSC010NE2LSATMA1MOSFET
Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| ±20 | |
| 2 | |
| 39 | |
| 100 | |
| 10 | |
| 1@10V | |
| 31@4.5V|64@10V | |
| 64 | |
| 4700@12V | |
| 2500 | |
| 4.4 | |
| 6 | |
| 34 | |
| 6.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8@10V|1.1@4.5V | |
| 400 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 5.9 |
| Longueur du paquet | 5.15 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Make an effective common source amplifier using this BSC010NE2LSATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 96000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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