Infineon Technologies AGBSC010NE2LSATMA1MOSFETs
Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| ±20 | |
| 2 | |
| 39 | |
| 100 | |
| 10 | |
| 1@10V | |
| 31@4.5V|64@10V | |
| 64 | |
| 4700@12V | |
| 2500 | |
| 4.4 | |
| 6 | |
| 34 | |
| 6.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8@10V|1.1@4.5V | |
| 400 | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 5.9 |
| Package Length | 5.15 |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| 8 | |
| Lead Shape | No Lead |
Make an effective common source amplifier using this BSC010NE2LSATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 96000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.