Infineon Technologies AG Diodes, Transistors and Thyristors
8 154 Infineon Technologies AG Diodes, Transistors and Thyristors
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPT012N08N5ATMA1
Trans MOSFET N-CH 80V 56A 9-Pin(8+Tab) HSOF T/R
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Stock
1 006
De $3.73 à $5.68
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 80 | 20 | 3.8 | 56 | 1.2@10V | 178@10V | 62 | 0.4 | 178 | 375000 | 13000@40V | 1@10V|1.3@6V | Tape and Reel | 9 | HSOF | SO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDQ60T022S7AXTMA1
Trans MOSFET N-CH 600V 90A 22-Pin HDSOP EP T/R Automotive AEC-Q101
|
Stock
10
De $6.6969 à $3.959
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Single Dual Gate Octal Source Eleven Drain | Enhancement | 1 | 600 | 20 | 90 | 22@12V | 150@12V | 416000 | 5640@300V | 22 | HDSOP EP | SO | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSR802NL6327HTSA1
Trans MOSFET N-CH 20V 3.7A 3-Pin SC-59 T/R Automotive AEC-Q101
|
Stock
262
De $0.273 à $0.428
Par unité
|
Infineon Technologies AG | MOSFET | Small Signal | N | Single | Enhancement | 1 | 20 | ±8 | 3.7 | 23@2.5V | 4.7@2.5V | 500 | 1013@10V | Tape and Reel | 3 | SC-59 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60R1K0CEAUMA1
Trans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) DPAK T/R
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Stock
15 000
De $0.2093 à $0.227
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 3.5 | 6.8 | 1000@10V | 13@10V | 62 | 3.41 | 13 | 61000 | 280@100V | 860@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60R145CFD7ATMA1
Trans MOSFET N-CH 600V 16A 3-Pin(2+Tab) DPAK T/R
|
Stock
2 690
De $1.596 à $2.13
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4.5 | 16 | 145@10V | 31@10V | 31 | 83000 | 1330@400V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPL65R195C7AUMA1
Trans MOSFET N-CH 650V 12A 4-Pin VSON EP T/R
|
Stock
3 000
$3.02
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 650 | 20 | 4 | 12 | 195@10V | 23@10V | 62 | 23 | 75000 | 1150@400V | 173@10V | CoolMOS C7 | Tape and Reel | 4 | VSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB50N10S3L16ATMA1
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
|
Stock
4 000
De $1.0142 à $1.0466
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 2.4 | 50 | 15.4@10V | 49@10V | 1.5 | 49 | 100000 | 3215@25V | 12.8@10V|13.1@10V|15.8@4.5V|16.1@4.5V | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCR08PNH6327XTSA1
Trans Digital BJT NPN/PNP 50V 0.1A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
|
Stock
18 000
De $0.252 à $0.399
Par unité
|
Infineon Technologies AG | BJT numérique | NPN|PNP | Dual | 50 | 2.2 | 0.047 | 0.1 | 70@5mA@5V | 250 | 0.3@0.5mA@10mA | Tape and Reel | 6 | SOT-363 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW75N65EL5XKSA1
Trans IGBT Chip N-CH 650V 80A 536W 3-Pin(3+Tab) TO-247 Tube
|
Stock
222
$3.086
Par unité
|
Infineon Technologies AG | Puce IGBT | Trench Stop 5 | N | Single | ±20 | 650 | 80 | 536 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0911NDATMA1
Trans MOSFET N-CH 25V 18A/30A 8-Pin TISON EP T/R
|
Stock
5 000
$0.5636
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Dual | Enhancement | 2 | 25 | ±20 | 2 | 18@Q1|30@Q2 | 3.2@10V@Q1|1.2@10V@Q2 | 7.7@4.5V@Q1|25@4.5V@Q2 | 50 | 1.5 | 2500 | 1200@12V@Q1|3800@12V@Q2 | Tape and Reel | 8 | TISON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP147N12N3GXKSA1
Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-220 Tube
|
Stock
4 300
De $0.541 à $1.6002
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 120 | ±20 | 4 | 56 | 14.7@10V | 37@10V | 37 | 107000 | 2420@60V | 12.3@10V|12.6@10V | OptiMOS | Tube | 3 | TO-220 | TO | No | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP80R450P7XKSA1
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220 Tube
|
Stock
6 200
De $0.8794 à $0.9954
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 800 | 20 | 3.5 | 11 | 450@10V | 24@10V | 62 | 1.7 | 24 | 73000 | 770@500V | 380@10V | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFHS8242TRPBF
Trans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R
|
Stock
2 185
De $0.251 à $0.394
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Single Quad Drain Dual Source | Enhancement | 1 | 25 | ±20 | 9.9 | 13@10V | 4.3@4.5V|10.4@10V | 10.4 | 2100 | 653@10V | 10@10V|17@4.5V | Tape and Reel | 6 | PQFN EP | QFN | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPU95R750P7AKMA1
Trans MOSFET N-CH 950V 9A 3-Pin(3+Tab) TO-251 Tube
|
Stock
1 500
De $0.678 à $2.1508
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 950 | 20 | 3.5 | 9 | 750@10V | 23@10V | 23 | 73000 | 712@400V | 640@10V | Tube | 3 | TO-251 | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0501NSIATMA1
Trans MOSFET N-CH 30V 29A 8-Pin TDSON EP T/R
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Stock
5 000
$0.4407
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | 20 | 2 | 29 | 1.9@10V | 11.4@4.5V|24@10V | 50 | 24 | 2500 | 1600@15V | 1.5@10V|2@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB7530PBF
Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-220AB Tube
|
Stock
1 105
De $1.3571 à $0.6206
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 3.7 | 295 | 2@10V | 274@10V | 0.4 | 274 | 375000 | 13703@25V | 1.65@10V|2.1@6V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAR8802VH6327XTSA1
Diode PIN Switch 80V 100mA 2-Pin SC-79 T/R
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Stock
49
De $0.0733 à $0.108
Par unité
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Infineon Technologies AG | PIN | Switch | UHF | Single | 80 | 100 | 0.6(Typ)@10mA | 1.2 | 2.5@1mA | 0.4@1V | 0.5 | 250 | Tape and Reel | 2 | SC-79 | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPC100N04S5L1R5ATMA1
Trans MOSFET N-CH 40V 100A 8-Pin TDSON EP T/R Automotive AEC-Q101
|
Stock
4 990
$2.52
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±16 | 2 | 100 | 1.5@10V | 70@10V | 50 | 1.3 | 70 | 115000 | 905 | 4020@25V | 1.2@10V|1.5@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPS65R950C6
Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-251 Tube
|
Stock
250
De $0.428 à $0.828
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 3.5 | 4.5 | 950@10V | 15.3@10V | 15.3 | 37000 | 328@100V | Tube | 3 | TO-251 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ040N04LSGATMA1
Trans MOSFET N-CH 40V 18A 8-Pin TSDSON EP T/R
|
Stock
1 880
De $0.794 à $1.37
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 2 | 18 | 4@10V | 23@4.5V|48@10V | 48 | 2100 | 3800@20V | 3.3@10V|4.5@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R160C6ATMA1
Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
|
Stock
4 000
$1.6032
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 3.5 | 23.8 | 160@10V | 75@10V | 62 | 75 | 176000 | 1660@100V | 140@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DDB6U104N16RRBPSA1
IGBT Module Single Chopper
|
Stock
10
De $56.53 à $60.80
Par unité
|
Infineon Technologies AG | Module IGBT | 19 | ECONO2B | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS13MR12W2M1HC55BPSA1
Trans MOSFET N-CH SiC 1.2KV 62.5A 38-Pin Tray
|
Stock
12
$151.20
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | SiC | N | Hex | Enhancement | 6 | 1200 | 20 | 62.5 | 11.7(Typ)@18V | 200@18V | 6050@800V | Tray | 38 | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ010NE2LS5ATMA1
Trans MOSFET N-CH 25V 32A 8-Pin TSDSON EP T/R
|
Stock
4 900
De $1.00 à $2.34
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 25 | 16 | 2 | 32 | 1@10V | 21@4.5V | 2100 | 3000@12V | 0.8@10V|1@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP7430PBF
Trans MOSFET N-CH Si 40V 404A 3-Pin(3+Tab) TO-247AC Tube
|
Stock
2 884
De $1.3177 à $0.5063
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 3.9 | 404 | 1.3@10V | 300@10V | 40 | 0.41 | 300 | 366000 | 2130 | 14240@25V | 1@10V|1.2@6V | Tube | 3 | TO-247AC | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes |