Infineon Technologies AGBSZ040N04LSGATMA1MOSFET
Trans MOSFET N-CH 40V 18A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2 | |
| 18 | |
| 4@10V | |
| 23@4.5V|48@10V | |
| 48 | |
| 3800@20V | |
| 2100 | |
| 5.4 | |
| 4.8 | |
| 33 | |
| 8.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 3.3@10V|4.5@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 3.3 mm |
| Longueur du paquet | 3.3 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TSDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' BSZ040N04LSGATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 2100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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