Infineon Technologies AGIPB50N10S3L16ATMA1MOSFET
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.55 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.4 | |
| 50 | |
| 100 | |
| 1 | |
| 15.4@10V | |
| 49@10V | |
| 49 | |
| 3215@25V | |
| 100000 | |
| 5 | |
| 5 | |
| 28 | |
| 10 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 12.8@10V|13.1@10V|15.8@4.5V|16.1@4.5V | |
| 280 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.4 mm |
| Largeur du paquet | 9.25 mm |
| Longueur du paquet | 10 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The IPB50N10S3L16ATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 100000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
Contrer efficacement les menaces des drones
Apprenez à combiner traitement intelligent, détection avancée et réponse rapide dans un système de défense unifié contre les drones.