Infineon Technologies AGIPB50N10S3L16ATMA1MOSFETs
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.55 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.4 | |
| 50 | |
| 100 | |
| 1 | |
| 15.4@10V | |
| 49@10V | |
| 49 | |
| 3215@25V | |
| 100000 | |
| 5 | |
| 5 | |
| 28 | |
| 10 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 12.8@10V|13.1@10V|15.8@4.5V|16.1@4.5V | |
| 280 | |
| Mounting | Surface Mount |
| Package Height | 4.4 mm |
| Package Width | 9.25 mm |
| Package Length | 10 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The IPB50N10S3L16ATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 100000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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