Infineon Technologies AG Diodes, Transistors and Thyristors
8 154 Infineon Technologies AG Diodes, Transistors and Thyristors
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Surge Current Rating - (A) | Material | Diode Type | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Minimum Frequency - (MHz) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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Les plus vendues
BSC600N25NS3GATMA1
Trans MOSFET N-CH 250V 25A 8-Pin TDSON EP T/R
|
Stock
52 855
De $1.518 à $2.391
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 250 | ±20 | 4 | 25 | 22@10V | 22 | 1770@100V | 125000 | 60@10V | 50@10V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP50R12KT4GBOSA1
Trans IGBT Module N-CH 1200V 50A 280W 35-Pin ECONO3-3 Tray
|
Stock
9
$75.05
Par unité
|
Infineon Technologies AG | Module IGBT | Hex | N | ±20 | 1200 | 50 | 280 | Tray | 35 | ECONO3-3 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Les plus vendues
BAS4004E6327HTSA1
Diode Schottky Si 0.12A 3-Pin SOT-23 T/R Automotive AEC-Q101
|
Stock
69 970
$0.146
Par unité
|
Infineon Technologies AG | Rectifiers | Schottky Diode | Si | Dual Series | 0.12 | 0.2 | 1@0.04A | 1@30V | 5 | 250 | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Les plus consultées
IRLML6402TRPBF
Trans MOSFET P-CH Si 20V 3.7A 3-Pin SOT-23 T/R
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Stock
1 804
De $0.162 à $0.211
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Si | Single | P | Enhancement | 1 | 20 | ±12 | 1.2 | 3.7 | 8@5V | 100 | 633@10V | 145 | 1300 | 65@4.5V | 80@2.5V|50@4.5V | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7205TRPBF
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R
|
Stock
12 001
$0.2285
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | Si | Single Quad Drain Triple Source | P | Enhancement | 1 | 30 | ±20 | 3 | 4.6 | 27@10V | 50 | 27 | 870@10V | 720 | 2500 | 70@10V | Tape and Reel | 8 | SOIC N | SO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW156E6327HTSA1
Diode Switching 85V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
|
Stock
30 000
$0.1767
Par unité
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Infineon Technologies AG | Rectifiers | Switching Diode | Dual Common Anode | 85 | 0.2 | 4.5 | 1.25@0.15A | 0.005@75V | 1500 | 250 | Tape and Reel | 3 | SOT-23 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGP6630DPBF
Trans IGBT Chip N-CH 600V 47A 192W 3-Pin(3+Tab) TO-247AC Tube
|
Stock
8
$0.5032
Par unité
|
Infineon Technologies AG | Puce IGBT | Trench Stop | Single | N | ±20 | 600 | 47 | 192 | Tube | 3 | TO-247AC | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6715MTRPBF
Trans MOSFET N-CH Si 25V 34A 7-Pin Direct-FET MX T/R
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Stock
295
De $1.747 à $2.262
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | Si | Single Quad Drain Dual Source | N | Enhancement | 1 | 25 | ±20 | 2.4 | 34 | 40@4.5V | 5340@13V | 2800 | 1.6@10V | 1.3@10V|2.1@4.5V | Tape and Reel | 7 | Direct-FET MX | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010ZSTRLPBF
Trans MOSFET N-CH Si 55V 94A 3-Pin(2+Tab) D2PAK T/R
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Stock
2 978
De $1.17 à $2.88
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 55 | ±20 | 4 | 94 | 63@10V | 63 | 2840@25V | 140000 | 7.5@10V | 5.8@10V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFI4110GPBF
Trans MOSFET N-CH Si 100V 72A 3-Pin(3+Tab) TO-220FP Tube
|
Stock
3 773
De $1.851 à $4.301
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 100 | ±20 | 4 | 72 | 190@10V | 190 | 9540@50V | 61000 | 4.5@10V | 3.7@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS150R12KT3BOSA1
Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray
|
Stock
10
$167.02
Par unité
|
Infineon Technologies AG | Module IGBT | Hex | N | ±20 | 1200 | 200 | 700 | Tray | 35 | ECONO3-4 | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R125CPXKSA1
Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-220FP Tube
|
Stock
742
$3.336
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 650 | ±20 | 3.5 | 25 | 53@10V | 80 | 3.6 | 53 | 2500@100V | 35000 | 125@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD053N06NATMA1
Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) DPAK T/R
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Stock
38 423
De $0.4797 à $0.1852
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 60 | ±20 | 2.8(Typ) | 45 | 27@10V | 27 | 2000@30V | 3000 | 5.3@10V | 4.5@10V|6@6V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R045CPFKSA1
Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
|
Stock
4 148
$9.3948
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 650 | ±20 | 3.5 | 60 | 150@10V | 62 | 150 | 6800@100V | 431000 | 45@10V | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SMBT3904PNH6327XTSA1
Trans GP BJT NPN/PNP 40V 0.2A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
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Stock
26 848
De $0.0433 à $0.066
Par unité
|
Infineon Technologies AG | GP BJT | NPN|PNP | Bipolar Small Signal | Si | Dual | 40 | 40 | 2 | 6 | 0.85@1mA@10mA|0.95@5mA@50mA | 0.2 | 40@100uA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | 30 to 50|50 to 120 | 0.25@1mA@10mA|0.4@5mA@50mA | 250 | Tape and Reel | 6 | SOT-363 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS606NH6327XTSA1
Trans MOSFET N-CH 60V 3.2A 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
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Stock
23 000
De $0.1324 à $0.1792
Par unité
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Infineon Technologies AG | MOSFET | Small Signal | Single Dual Drain | N | Enhancement | 1 | 60 | ±20 | 2.3 | 3.2 | 3.7@5V | 494@25V | 1000 | 60@10V | 47@10V|66@4.5V | Tape and Reel | 4 | SOT-89 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIKQ120N60CTXKSA1
Trans IGBT Chip N-CH 600V 160A 833W Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
|
Stock
240
De $13.00 à $17.20
Par unité
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Infineon Technologies AG | Puce IGBT | Single | N | ±20 | 600 | 160 | 833 | Tube | 3 | TO-247 | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH04G65C6XKSA1
Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220 Tube
|
Stock
814
De $0.863 à $2.49
Par unité
|
Infineon Technologies AG | Rectifiers | Schottky Diode | SiC | Single | 650 | 12 | 29 | 1.35@4A | 14@420V | 205(Typ) | 45000 | Tube | 2 | TO-220 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLS3036TRLPBF
Trans MOSFET N-CH Si 60V 270A 3-Pin(2+Tab) D2PAK T/R
|
Stock
3 200
$1.4309
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 60 | ±16 | 270 | 91@4.5V | 0.4 | 11210@50V | 380000 | 2.4@10V | 1.9@10V|2.2@4.5V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGT65R035D2ATMA1
Enhancement-Mode Power GaN Transistor
|
Stock
1
$5.023
Par unité
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Infineon Technologies AG | MOSFET | 8 | HSOF EP | SO | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML0040TRPBF
Trans MOSFET N-CH 40V 3.6A 3-Pin SOT-23 T/R
|
Stock
414 000
De $0.0703 à $0.0872
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 40 | ±16 | 3.6 | 2.6@4.5V | 266@25V | 1300 | 56@10V | 44@10V|62@4.5V | HEXFET | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGC033S10S1XTMA1
Trans MOSFET N-CH GaN 100V 21A 6-Pin TSON T/R
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Stock
42
De $2.8583 à $4.2314
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | GaN | Single Dual Drain Triple Source | N | Enhancement | 1 | 100 | 5.5 | 21 | 11@5V | 1200@50V | 3300 | 3.3@5V | 6 | TSON | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP840ESDH6327XTSA1
Trans RF BJT NPN 2.25V 0.035A 75mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R
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Stock
2 880
De $0.203 à $0.318
Par unité
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Infineon Technologies AG | BJT FR | NPN | SiGe | Single Dual Emitter | 2.25 | 2.9 | 1 | 0.035 | 1.8V/10mA | 150@10mA@1.8V | 120 to 200 | 0.41 | 80000(Typ) | 0.037 | 75 | 5(Typ) | 17 | 19.5 | 1.45(Typ) | Tape and Reel | 4 | SOT-343 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDP30E120XKSA1
Diode Switching 1.2KV 50A 2-Pin(2+Tab) TO-220 Tube
|
Stock
27 045
De $0.9208 à $2.6212
Par unité
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Infineon Technologies AG | Rectifiers | Switching Diode | Single | 1200 | 50 | 102 | 2.15@30A | 100 | 243(Typ) | 138000 | Tube | 2 | TO-220 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN65R1K5CEATMA1
Trans MOSFET N-CH 650V 5.2A 3-Pin SOT-223 T/R
|
Stock
6 000
De $0.1155 à $0.1187
Par unité
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Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 650 | 20 | 3.5 | 5.2 | 10.5@10V | 75 | 10.5 | 225@100V | 5000 | 1500@10V | 1350@10V | Tape and Reel | 3 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes |