Infineon Technologies AGIPD053N06NATMA1MOSFET
Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.8(Typ) | |
| 45 | |
| 100 | |
| 1 | |
| 5.3@10V | |
| 27@10V | |
| 27 | |
| 2000@30V | |
| 3000 | |
| 7 | |
| 12 | |
| 20 | |
| 12 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 4.5@10V|6@6V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 6.22 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Make an effective common source amplifier using this IPD053N06NATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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