Infineon Technologies AGIPD053N06NATMA1MOSFETs
Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.8(Typ) | |
| 45 | |
| 100 | |
| 1 | |
| 5.3@10V | |
| 27@10V | |
| 27 | |
| 2000@30V | |
| 3000 | |
| 7 | |
| 12 | |
| 20 | |
| 12 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 4.5@10V|6@6V | |
| Mounting | Surface Mount |
| Package Height | 2.3 mm |
| Package Width | 6.22 mm |
| Package Length | 6.5 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 |
Make an effective common source amplifier using this IPD053N06NATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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