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Infineon Technologies AGBSC600N25NS3GATMA1MOSFET
Trans MOSFET N-CH 250V 25A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 250 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 25 | |
| 60@10V | |
| 22@10V | |
| 22 | |
| 1770@100V | |
| 125000 | |
| 8 | |
| 10 | |
| 22 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 50@10V | |
| 100 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
As an alternative to traditional transistors, the BSC600N25NS3GATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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