ADPA9007: DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier
Analog Devices02 Jul 2024
The ADPA9007 amplifier provides a gain of 12.5 dB, an output power for 1 dB compression (OP1dB) of 33 dBm, and an output third-order intercept (OIP3) of 45 dBm from 2 GHz to 16 GHz. The amplifier operates from a typical supply voltage of 15 V and has a 500 mA typical quiescent bias current, which is adjustable.
The ADPA9007 is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process. The amplifier is housed in an RoHS-compliant, 32-Lead, 5 mm × 5 mm, lead frame chip scale package, premolded cavity [LFCSP_CAV] and is specified for operation from −40°C to +85°C.
Key Features and Benefits
- Wideband, internally-matched, RF power amplifier
- DC-coupled input and output
- Integrated RF power detector
- Integrated temperature sensor
- Gain: 12.5 dB typical at 2 GHz to 16 GHz
- OP1dB: 33 dBm typical at 2 GHz to 16 GHz
- PSAT: 34 dBm typical at 2 GHz to 16 GHz
- OIP3: 45 dBm typical at 2 GHz to 16 GHz
- 32-Lead, 5.00 mm × 5.00 mm, LFCSP_CAV package
Applications
- Electronic warfare
- Radar
- Test and measurement equipment
Evaluation Board
The ADPA9007 can be evaluated with the ADPA9007-EVALZ.
Block Diagrams and Tables
Article Tags
Analog Devices
ADI Electronics
