Toshiba Diodes, Transistors and Thyristors

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3,796 Toshiba Diodes, Transistors and Thyristors

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Part No. Price Stock Manufacturer Category Type Maximum Rate of Rise of Off-State Voltage - (V/us) Category Maximum Rate of Rise of On-State Current - (A/us) Material Frequency Band Channel Type Maximum Gate Trigger Voltage - (V) Configuration Channel Mode Typical Zener Voltage - (V) Repetitive Peak Reverse Voltage - (V) Peak Reverse Repetitive Voltage - (V) Maximum Reverse Voltage - (V) Maximum Gate Trigger Current - (mA) Maximum Gate Emitter Voltage - (V) Maximum Collector-Emitter Voltage - (V) Zener Voltage Tolerance Surge Current Rating - (A) Maximum Reverse Current - (uA) Maximum Continuous Forward Current - (A) Maximum Collector-Base Voltage - (V) Number of Elements per Chip Minimum Tuning Ratio Maximum Holding Current - (mA) Maximum Drain-Gate Voltage - (V) Maximum Continuous DC Collector Current - (A) Maximum Base-Emitter Voltage - (V) Typical Input Resistance - (kOhm) Tuning Ratio Test Condition Test Current - (mA) Peak Non-Repetitive Forward Surge Current - (A) Maximum Series Resistance @ Maximum IF - (Ohm) Maximum Forward Voltage - (V) Maximum Drain-Source Voltage - (V) Maximum Base-Emitter Saturation Voltage - (V) Typical Resistor Ratio Peak Reverse Current - (uA) Maximum Reverse Leakage Current - (uA) Maximum Gate-Source Voltage - (V) Maximum DC Collector Current - (A) Peak On-State Voltage - (V) Operational Bias Conditions Minimum Diode Capacitance - (pF) Maximum Junction Ambient Thermal Resistance Maximum Gate Threshold Voltage - (V) Maximum Gate Peak Inverse Voltage - (V) Maximum Zener Impedance - (Ohm) Maximum Power Dissipation - (mW) Maximum Power Dissipation @ 25C - (mW) Maximum Diode Capacitance - (pF) Maximum Continuous Drain Current - (A) RMS On-State Current - (A) Repetitive Peak Forward Blocking Voltage - (V) Rated Average On-State Current - (A) Peak Reverse Recovery Time - (ns) Minimum DC Current Gain Range Minimum DC Current Gain Maximum Drain-Source Resistance - (mOhm) Typical Gate Charge @ Vgs - (nC) Repetitive Peak Off-State Current - (mA) Maximum Junction Case Thermal Resistance Typical Gate Charge @ 10V - (nC) Typical Output Capacitance - (pF) Typical Input Capacitance @ Vds - (pF) Typical Power Gain - (dB) Maximum Output Power - (W) Maximum Collector-Emitter Saturation Voltage - (V) Maximum Frequency - (MHz) Typical 3rd Order Intercept Point - (dBm) Maximum Transition Frequency - (MHz) Maximum Noise Figure - (dB) Typical Drain-Source Resistance @ 25°C - (mOhm) Process Technology Packaging Pin Count Supplier Package Standard Package Name CECC Qualified ESD Protection Military AEC Qualified AEC Qualified Number Auto motive P PAP ECCN Code SVHC SVHC Exceeds Threshold
Part No. Price Stock Manufacturer Category Type Maximum Rate of Rise of Off-State Voltage - (V/us) Category Maximum Rate of Rise of On-State Current - (A/us) Material Frequency Band Channel Type Maximum Gate Trigger Voltage - (V) Configuration Channel Mode Typical Zener Voltage - (V) Repetitive Peak Reverse Voltage - (V) Peak Reverse Repetitive Voltage - (V) Maximum Reverse Voltage - (V) Maximum Gate Trigger Current - (mA) Maximum Gate Emitter Voltage - (V) Maximum Collector-Emitter Voltage - (V) Zener Voltage Tolerance Surge Current Rating - (A) Maximum Reverse Current - (uA) Maximum Continuous Forward Current - (A) Maximum Collector-Base Voltage - (V) Number of Elements per Chip Minimum Tuning Ratio Maximum Holding Current - (mA) Maximum Drain-Gate Voltage - (V) Maximum Continuous DC Collector Current - (A) Maximum Base-Emitter Voltage - (V) Typical Input Resistance - (kOhm) Tuning Ratio Test Condition Test Current - (mA) Peak Non-Repetitive Forward Surge Current - (A) Maximum Series Resistance @ Maximum IF - (Ohm) Maximum Forward Voltage - (V) Maximum Drain-Source Voltage - (V) Maximum Base-Emitter Saturation Voltage - (V) Typical Resistor Ratio Peak Reverse Current - (uA) Maximum Reverse Leakage Current - (uA) Maximum Gate-Source Voltage - (V) Maximum DC Collector Current - (A) Peak On-State Voltage - (V) Operational Bias Conditions Minimum Diode Capacitance - (pF) Maximum Junction Ambient Thermal Resistance Maximum Gate Threshold Voltage - (V) Maximum Gate Peak Inverse Voltage - (V) Maximum Zener Impedance - (Ohm) Maximum Power Dissipation - (mW) Maximum Power Dissipation @ 25C - (mW) Maximum Diode Capacitance - (pF) Maximum Continuous Drain Current - (A) RMS On-State Current - (A) Repetitive Peak Forward Blocking Voltage - (V) Rated Average On-State Current - (A) Peak Reverse Recovery Time - (ns) Minimum DC Current Gain Range Minimum DC Current Gain Maximum Drain-Source Resistance - (mOhm) Typical Gate Charge @ Vgs - (nC) Repetitive Peak Off-State Current - (mA) Maximum Junction Case Thermal Resistance Typical Gate Charge @ 10V - (nC) Typical Output Capacitance - (pF) Typical Input Capacitance @ Vds - (pF) Typical Power Gain - (dB) Maximum Output Power - (W) Maximum Collector-Emitter Saturation Voltage - (V) Maximum Frequency - (MHz) Typical 3rd Order Intercept Point - (dBm) Maximum Transition Frequency - (MHz) Maximum Noise Figure - (dB) Typical Drain-Source Resistance @ 25°C - (mOhm) Process Technology Packaging Pin Count Supplier Package Standard Package Name CECC Qualified ESD Protection Military AEC Qualified AEC Qualified Number Auto motive P PAP ECCN Code SVHC SVHC Exceeds Threshold
Top Searched
1SV229TPH3F Varactor Diode Single 15V 14pF 2-Pin USC T/R
10+
$0.1070
50+
$0.0939
100+
$0.0915
200+
$0.0887
500+
$0.0836
Increments of 1pieces.
Stock 2,329
From $0.0836 to $0.107
Per Unit
Ships in 4 days
Toshiba Varactors VCO UHF Single 15 0.003 2 2V/10V 14@2V Tape and Reel 2 USC SOD No No No No No EAR99 No
TPN11003NL,LQ(S Trans MOSFET N-CH Si 30V 31A 8-Pin TSON Advance T/R
5+
$0.1280
50+
$0.1180
100+
$0.1160
200+
$0.1155
Increments of 1pieces.
Stock 211
From $0.1155 to $0.128
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Toshiba MOSFETs Power MOSFET Si N Single Quad Drain Triple Source Enhancement 1 30 ±20 2.3 19000 31 11@10V 3.3@4.5V|7.5@10V 7.5 510@15V 8 TSON Advance SON Unknown Unknown No No No No EAR99 No
TK1Q90A(Q) Trans MOSFET N-CH Si 900V 1A 3-Pin(3+Tab) New PW-Mold2 Bag
Per Unit
$1.13
Increments of 1pieces.
Stock 340
$1.13
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si N Single Enhancement 1 900 ±30 20000 1 9000@10V 13@10V 13 320@25V Bag 3 New PW-Mold2 No No No No No EAR99 No
TK090N65Z,S1F(S Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-247
Per Unit
$2.9365
Increments of 30
Stock 120
$2.9365
Per Unit
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Toshiba MOSFETs Power MOSFET Si N Single Enhancement 1 650 ±30 230000 30 90@10V 47@10V 2780@300V 3 TO-247 TO No No No No EAR99 No
TK090A65Z,S4X(S Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-220SIS
Per Unit
$3.57
Increments of 1pieces.
Stock 4
$3.57
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si N Single Enhancement 1 650 ±30 45000 30 90@10V 47@10V 2780@300V 3 TO-220SIS TO No No No No EAR99
TK9A90E,S4X(S Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-220SIS Tube
1+
$3.34
10+
$1.62
Increments of 1pieces.
Stock 20
From $1.62 to $3.34
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si N Single Enhancement 1 900 ±30 4 50000 9 1300@10V 46@10V 46 2000@25V Tube 3 TO-220SIS TO No No No No EAR99 No
TK16J55D(F) Trans MOSFET N-CH Si 550V 16A 3-Pin(3+Tab) TO-3PN
1+
$2.00
10+
$1.41
50+
$1.19
Increments of 1pieces.
Stock 67
From $1.19 to $2.00
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si N Single Enhancement 1 550 ±30 250000 16 370@10V 40@10V 40 2300@25V 3 TO-3PN TO No No No No No EAR99 No
TPH6R30ANL,L1Q(M Trans MOSFET N-CH Si 100V 66A 8-Pin SOP Advance T/R
1+
$1.770
10+
$0.868
50+
$0.791
100+
$0.643
200+
$0.602
Increments of 1pieces.
Stock 895
From $0.602 to $1.77
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si N Single Quad Drain Triple Source Enhancement 1 100 ±20 2500 66 6300@10V 27@4.5V|55@10V 3300@50V 8 SOP Advance SO No No No No EAR99 Yes Yes
TPCC8104,L1Q(CM Trans MOSFET P-CH Si 30V 20A 8-Pin TSON EP Advance T/R
5+
$0.423
50+
$0.282
100+
$0.263
200+
$0.262
500+
$0.221
Increments of 1pieces.
Stock 1,848
From $0.221 to $0.423
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si P Single Quad Drain Triple Source Enhancement 1 30 20 1900 20 8.8@10V 58@10V 2260@10V Tape and Reel 8 TSON EP Advance SON No No No No EAR99 No
TK10A60W,S4VX(M Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
1+
$0.713
10+
$0.610
Increments of 1pieces.
Stock 35
From $0.61 to $0.713
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si N Single Enhancement 1 600 ±30 30000 9.7 380@10V 20@10V 700@300V 3 TO-220SIS TO No No No No EAR99
TRS12E65C,S1AQ(S Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220-L Tube
1+
$12.10
5+
$9.49
10+
$9.00
50+
$7.91
Increments of 1pieces.
Stock 50
From $7.91 to $12.10
Per Unit
Ships in 4 days
Toshiba Rectifiers Schottky Diode SiC Single 650 12 1.7 90 Tube 2 TO-220-L No No No No EAR99
TK100A06N1,S4X(S Trans MOSFET N-CH Si 60V 263A 3-Pin(3+Tab) TO-220SIS Magazine
Per Unit
$1.7557
Increments of 50
Stock 750
$1.7557
Per Unit
Ships in 2 days
Toshiba MOSFETs Power MOSFET Si N Single Enhancement 1 60 ±20 45000 263 2.7@10V 140@10V 140 10500@30V Magazine 3 TO-220SIS TO No No No No No EAR99 Yes Yes
TRS8E65F,S1Q(S Diode Schottky SiC 650V 8A 2-Pin(2+Tab) TO-220-L Tube
1+
$27.20
5+
$22.10
10+
$20.60
Increments of 1pieces.
Stock 49
From $20.60 to $27.20
Per Unit
Ships in 4 days
Toshiba Rectifiers Schottky Diode SiC Single 650 8 69 1.6 40 Tube 2 TO-220-L No No No No EAR99
TK7J90E,S1E(S Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-3PN
Per Unit
$3.78
Increments of 1pieces.
Stock 2
$3.78
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si N Single Enhancement 1 900 ±30 200000 7 2000@10V 32@10V 1350@25V 3 TO-3PN TO No No No EAR99 No
SSM6N67NU,LF(T Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP
5+
$0.700
50+
$0.341
100+
$0.312
200+
$0.311
500+
$0.253
Increments of 1pieces.
Stock 1,715
From $0.253 to $0.70
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si N Dual Enhancement 2 30 12 2000 4 39.1@4.5V 3.2@4.5V 310@15V 6 UDFN EP DFN No No No No EAR99 No
TPCP8505(TE85L,F) Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R
5+
$0.1080
50+
$0.1000
100+
$0.0984
200+
$0.0983
500+
$0.0976
Increments of 1pieces.
Stock 1,765
From $0.0976 to $0.108
Per Unit
Ships in 4 days
Toshiba GP BJT NPN Bipolar Power Si Single Hex Collector 50 100 1 7 1.1@20mA@1A 3 3000 200 to 300|300 to 500 200@1A@2V|400@0.3A@2V 0.14@20mA@1A Tape and Reel 8 PS No No No No No EAR99 No
TK14A65W,S5X(M Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-220SIS Tube
1+
$2.74
10+
$1.34
50+
$1.22
Increments of 1pieces.
Stock 50
From $1.22 to $2.74
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si N Single Enhancement 1 650 ±30 3.5 40000 13.7 250@10V 35@10V 35 1300@300V Tube 3 TO-220SIS TO No No No No EAR99 No
TK5A90E,S4X(S Trans MOSFET N-CH Si 900V 4.5A 3-Pin(3+Tab) TO-220SIS
1+
$1.010
10+
$0.743
Increments of 1pieces.
Stock 39
From $0.743 to $1.01
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si N Single Enhancement 1 900 ±30 40000 4.5 3100@10V 20@10V 950@25V 3 TO-220SIS TO No No No EAR99
TW030N120C,S1F Trans MOSFET N-CH SiC 1.2KV 60A 3-Pin(3+Tab) TO-247
Per Unit
$22.07
Increments of 30
Stock 30
$22.07
Per Unit
Ships tomorrow
Toshiba MOSFETs Power MOSFET SiC N Single Enhancement 1 1200 25 249000 60 40@18V 82@18V 2925@800V 3 TO-247 TO No No No No EAR99 No
TK12A60W,S5VX(J Trans MOSFET N-CH Si 600V 11.5A 3-Pin(3+Tab) TO-220SIS Tube
1+
$1.380
10+
$0.927
Increments of 1pieces.
Stock 21
From $0.927 to $1.38
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si N Single Enhancement 1 600 ±30 3.7 35000 11.5 300@10V 25@10V 25 890@300V DTMOSIV Tube 3 TO-220SIS TO No No No No EAR99
RN1105MFV,L3F(CT Transistor Silicon NPN Epitaxial PCT Process Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
10+
$0.0958
100+
$0.0591
200+
$0.0443
500+
$0.0428
1000+
$0.0339
Increments of 1pieces.
Stock 2,926
From $0.0339 to $0.0958
Per Unit
Ships in 7 days
Toshiba Digital BJT - Pre-Biased 3 VESM SOT No No
TRS3E65H,S1Q Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220 Stick
1+
$0.2611
10+
$0.2562
100+
$0.2560
1+
$0.7416
Increments of 1
Stock 196
From $0.7416 to $0.2611
Per Unit
Ships tomorrow
Toshiba Rectifiers Schottky Diode SiC Single 650 12 170 1.35@3A 45 55000 Stick 2 TO-220 TO No No No No EAR99
TRS4E65H,S1Q Diode Schottky SiC 650V 14A 2-Pin(2+Tab) TO-220 Stick
1+
$0.2958
50+
$0.2946
1+
$0.8484
Increments of 1
Stock 50
From $0.8484 to $0.2958
Per Unit
Ships tomorrow
Toshiba Rectifiers Schottky Diode SiC Single 650 14 230 1.35@4A 55 60000 Stick 2 TO-220 TO No No No EAR99
TRS8E65H,S1Q Diode Schottky SiC 650V 23A 2-Pin(2+Tab) TO-220 Stick
Per Unit
$1.461
Increments of 1
Stock 87
$1.461
Per Unit
Ships tomorrow
Toshiba Rectifiers Schottky Diode SiC Single 650 23 410 1.35@8A 90 75000 Stick 2 TO-220 TO No No No No EAR99
TPCC8105,L1Q(CM Trans MOSFET P-CH Si 30V 23A 8-Pin TSON EP Advance T/R
5+
$0.788
50+
$0.384
100+
$0.352
200+
$0.350
500+
$0.285
Increments of 1pieces.
Stock 1,157
From $0.285 to $0.788
Per Unit
Ships in 4 days
Toshiba MOSFETs Power MOSFET Si P Single Quad Drain Triple Source Enhancement 1 30 20 1900 23 7.8@10V 76@10V 3240@10V Tape and Reel 8 TSON EP Advance SON No No No No No EAR99 No

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