| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| HTS | EA |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 900 |
| Maximum Gate-Source Voltage (V) | ±30 |
| Maximum Continuous Drain Current (A) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 9000@10V |
| Typical Gate Charge @ Vgs (nC) | 13@10V |
| Typical Gate Charge @ 10V (nC) | 13 |
| Typical Input Capacitance @ Vds (pF) | 320@25V |
| Maximum Power Dissipation (mW) | 20000 |
| Typical Fall Time (ns) | 30 |
| Typical Rise Time (ns) | 25 |
| Minimum Operating Temperature (°C) | -50 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Bag |
| Mounting | Through Hole |
| Package Height | 5.5 |
| Package Width | 2.3 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Supplier Package | New PW-Mold2 |
| Pin Count | 3 |