Toshiba Diodes, Transistors and Thyristors
| 型号 | 价格 | 库存 | 供应商 | 类别 | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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Top Searched
1SV229TPH3F
Varactor Diode Single 15V 14pF 2-Pin USC T/R
|
库存
2,329
从 $0.0836 到 $0.107
每个
|
Toshiba | 变容二极管 | VCO | UHF | Single | 15 | 0.003 | 2 | 2V/10V | 14@2V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN11003NL,LQ(S
Trans MOSFET N-CH Si 30V 31A 8-Pin TSON Advance T/R
|
库存
211
从 $0.1155 到 $0.128
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.3 | 19000 | 31 | 11@10V | 3.3@4.5V|7.5@10V | 7.5 | 510@15V | 8 | TSON Advance | SON | Unknown | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK1Q90A(Q) Trans MOSFET N-CH Si 900V 1A 3-Pin(3+Tab) New PW-Mold2 Bag |
库存
340
$1.13
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 20000 | 1 | 9000@10V | 13@10V | 13 | 320@25V | Bag | 3 | New PW-Mold2 | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090N65Z,S1F(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-247
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库存
120
$2.9449
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 230000 | 30 | 90@10V | 47@10V | 2780@300V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090A65Z,S4X(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-220SIS
|
库存
4
$3.57
每个
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 45000 | 30 | 90@10V | 47@10V | 2780@300V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK9A90E,S4X(S
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-220SIS Tube
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库存
20
从 $1.62 到 $3.34
每个
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 4 | 50000 | 9 | 1300@10V | 46@10V | 46 | 2000@25V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16J55D(F)
Trans MOSFET N-CH Si 550V 16A 3-Pin(3+Tab) TO-3PN
|
库存
67
从 $1.19 到 $2.00
每个
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 550 | ±30 | 250000 | 16 | 370@10V | 40@10V | 40 | 2300@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH6R30ANL,L1Q(M
Trans MOSFET N-CH Si 100V 66A 8-Pin SOP Advance T/R
|
库存
895
从 $0.602 到 $1.77
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 2500 | 66 | 6300@10V | 27@4.5V|55@10V | 3300@50V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCC8104,L1Q(CM
Trans MOSFET P-CH Si 30V 20A 8-Pin TSON EP Advance T/R
|
库存
1,848
从 $0.221 到 $0.423
每个
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 30 | 20 | 1900 | 20 | 8.8@10V | 58@10V | 2260@10V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK10A60W,S4VX(M
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
|
库存
35
从 $0.61 到 $0.713
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 30000 | 9.7 | 380@10V | 20@10V | 700@300V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS12E65C,S1AQ(S
Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220-L Tube
|
库存
50
从 $7.91 到 $12.10
每个
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Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 12 | 1.7 | 90 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK100A06N1,S4X(S
Trans MOSFET N-CH Si 60V 263A 3-Pin(3+Tab) TO-220SIS Magazine
|
库存
750
$1.7607
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 45000 | 263 | 2.7@10V | 140@10V | 140 | 10500@30V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TRS8E65F,S1Q(S
Diode Schottky SiC 650V 8A 2-Pin(2+Tab) TO-220-L Tube
|
库存
49
从 $20.60 到 $27.20
每个
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Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 8 | 69 | 1.6 | 40 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK7J90E,S1E(S
Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-3PN
|
库存
2
$3.78
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 200000 | 7 | 2000@10V | 32@10V | 1350@25V | 3 | TO-3PN | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N67NU,LF(T Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP |
库存
1,715
从 $0.253 到 $0.70
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Dual | Enhancement | 2 | 30 | 12 | 2000 | 4 | 39.1@4.5V | 3.2@4.5V | 310@15V | 6 | UDFN EP | DFN | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8505(TE85L,F)
Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R
|
库存
1,765
从 $0.0976 到 $0.108
每个
|
Toshiba | 通用双极型晶体管 | NPN | Bipolar Power | Si | Single Hex Collector | 50 | 100 | 1 | 7 | 1.1@20mA@1A | 3 | 3000 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 0.14@20mA@1A | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK14A65W,S5X(M
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-220SIS Tube
|
库存
50
从 $1.22 到 $2.74
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 3.5 | 40000 | 13.7 | 250@10V | 35@10V | 35 | 1300@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK5A90E,S4X(S
Trans MOSFET N-CH Si 900V 4.5A 3-Pin(3+Tab) TO-220SIS
|
库存
39
从 $0.743 到 $1.01
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 40000 | 4.5 | 3100@10V | 20@10V | 950@25V | 3 | TO-220SIS | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TW030N120C,S1F
Trans MOSFET N-CH SiC 1.2KV 60A 3-Pin(3+Tab) TO-247
|
库存
30
$22.07
每个
|
Toshiba | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 1200 | 25 | 249000 | 60 | 40@18V | 82@18V | 2925@800V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK12A60W,S5VX(J
Trans MOSFET N-CH Si 600V 11.5A 3-Pin(3+Tab) TO-220SIS Tube
|
库存
21
从 $0.927 到 $1.38
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 35000 | 11.5 | 300@10V | 25@10V | 25 | 890@300V | DTMOSIV | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1105MFV,L3F(CT Transistor Silicon NPN Epitaxial PCT Process Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
库存
2,926
从 $0.0339 到 $0.0958
每个
|
Toshiba | 数字双极型晶体管 | 3 | VESM | SOT | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS3E65H,S1Q
Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220 Stick
|
库存
196
从 $0.7416 到 $0.2611
每个
|
Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 12 | 170 | 1.35@3A | 45 | 55000 | Stick | 2 | TO-220 | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TRS4E65H,S1Q
Diode Schottky SiC 650V 14A 2-Pin(2+Tab) TO-220 Stick
|
库存
50
从 $0.8484 到 $0.2958
每个
|
Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 14 | 230 | 1.35@4A | 55 | 60000 | Stick | 2 | TO-220 | TO | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TRS8E65H,S1Q
Diode Schottky SiC 650V 23A 2-Pin(2+Tab) TO-220 Stick
|
库存
87
$1.461
每个
|
Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 23 | 410 | 1.35@8A | 90 | 75000 | Stick | 2 | TO-220 | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPCC8105,L1Q(CM
Trans MOSFET P-CH Si 30V 23A 8-Pin TSON EP Advance T/R
|
库存
1,157
从 $0.285 到 $0.788
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 30 | 20 | 1900 | 23 | 7.8@10V | 76@10V | 3240@10V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No |