| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Maximum Continuous Drain Current (A) | 31 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 10 |
| Maximum Drain-Source Resistance (mOhm) | 11@10V |
| Typical Gate Charge @ Vgs (nC) | 3.3@4.5V|7.5@10V |
| Typical Gate Charge @ 10V (nC) | 7.5 |
| Typical Input Capacitance @ Vds (pF) | 510@15V |
| Maximum Power Dissipation (mW) | 19000 |
| Typical Fall Time (ns) | 1.9 |
| Typical Rise Time (ns) | 2.1 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Surface Mount |
| Package Height | 0.85 |
| Package Width | 3.1 |
| Package Length | 3.1 |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TSON Advance |
| Pin Count | 8 |
| Lead Shape | Flat |
