NXP Semiconductors 二极管、晶体管及晶闸管
| 型号 | 价格 | 库存 | 供应商 | 类别 | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MMRF1019NR4
Trans RF MOSFET N-CH 100V 4-Pin PLD-1.5 T/R
|
|
NXP Semiconductors | 射频 MOSFETs | N | Enhancement | Pulse | 100 | 10 | 2.5 | 9.55@50V | 25 | 960 | 10(Typ) | 1400 | 4 | PLD-1.5 | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S21170HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R
|
|
NXP Semiconductors | 射频 MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 16 | 2110 | 170 | 2170 | Tape and Reel | 3 | NI-880S | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PBLS4005V,115
Trans Digital BJT NPN/PNP 50V 0.1A/0.5A 300mW 6-Pin SOT-666 T/R Automotive AEC-Q101
|
|
NXP Semiconductors | 数字双极型晶体管 | NPN|PNP | Dual | 50@NPN|40@PNP | 0.1@NPN|0.5@PNP | 47@NPN | 1.2@50mA@500mA@PNP | 1@NPN | 300 | 80@5mA@5V@NPN|40@500mA@2V|150@100mA@2V|200@10mA@2V@PNP | 0.15@0.5mA@10mA@NPN|0.05@0.5mA@10mA|0.13@5mA@100mA|0.2@10mA@200mA|0.35@50mA@500mA@PNP | Tape and Reel | 6 | SOT-666 | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT86,133
Diode Schottky 0.2A 2-Pin DO-34 Ammo
|
|
NXP Semiconductors | Rectifiers | Schottky Diode | Single | 0.2@Ta=50C | 5 | 0.9@0.1A | 5@40V | 4 | Ammo | 2 | DO-34 | DO | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N4729A,113
Diode Zener Single 3.6V 5% 1000mW 2-Pin DO-41 T/R
|
|
NXP Semiconductors | 齐纳二极管 | Voltage Regulator | Single | 3.6 | 5% | 69 | 1.2 | 100 | 252 | 10 | 1000 | Tape and Reel | 2 | DO-41 | DO | No | Unknown | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT18S290-13SR3 Trans RF MOSFET N-CH 65V 7-Pin NI-880XS T/R |
|
NXP Semiconductors | 射频 MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 2.5 | 18.2 | 1805 | 63(Typ) | 1995 | Tape and Reel | 7 | NI-880XS | No | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZV90-C3V6,115
Zener Diode Single Dual Anode Dual Cathode 3.6V 5% 90Ohm 1500mW Automotive AEC-Q101 4-Pin(3+Tab) SC-73 T/R
|
|
NXP Semiconductors | 齐纳二极管 | Voltage Regulator | Single Dual Anode Dual Cathode | 3.6 | 5% | 5 | 5 | 90 | 1500 | 1500 | Tape and Reel | 4 | SC-73 | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA208X-800E,127
TRIAC 800V 71A 3-Pin(3+Tab) TO-220F Rail
|
|
NXP Semiconductors | TRIACs | 60(Min) | 100 | 1 | 800 | 10 | 12 | 1.65@10A | 800 | 0.5 | Rail | 3 | TO-220F | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BZV85-C8V2,113
Zener Diode Single 8.2V 5% 5Ohm 1300mW 2-Pin DO-41 T/R
|
|
NXP Semiconductors | 齐纳二极管 | Voltage Regulator | Single | 8.2 | 5% | 25 | 0.7 | 5 | 1300 | 1300 | Tape and Reel | 2 | DO-41 | DO | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA212B-600B,118
TRIAC 600V 105A 3-Pin(2+Tab) D2PAK T/R
|
|
NXP Semiconductors | TRIACs | 1.5 | 600 | 50 | 60 | 1.6@17A | 600 | 0.5 | Tape and Reel | 3 | D2PAK | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ACT108-600D,126
TRIAC 600V 8.8A 3-Pin TO-92 Ammo
|
|
NXP Semiconductors | TRIACs | 300(Min) | 50 | 0.9 | 600 | 5 | 20 | 1.3@1.1A | 600 | 0.002 | Ammo | 3 | TO-92 | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S18120HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
|
|
NXP Semiconductors | 射频 MOSFETs | N | Single | Enhancement | 1 | GSM|GSM EDGE | 65 | 10 | 18.2 | 1805 | 72(Typ) | 1880 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX84-B43,215
Diode Zener Single 43V 2% 250mW 3-Pin SOT-23 T/R
|
|
NXP Semiconductors | 齐纳二极管 | Voltage Regulator | Single | 43 | 2% | 2 | 0.9 | 0.05 | 150 | 250 | 250 | 40 | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MMRF1009HSR5
Trans RF MOSFET N-CH 110V 3-Pin NI-780S T/R
|
|
NXP Semiconductors | 射频 MOSFETs | N | Single | Enhancement | 1 | Pulse | 110 | 10 | 2.4 | 1391@50V | 19.7 | 900 | 500(Typ) | 1215 | Tape and Reel | 3 | NI-780S | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PSMN3R2-25YLC,115
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
|
|
NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 25 | 20 | 79000 | 100 | 3.4@10V | 26@10V|30@10V|14@4.5V | 26|30 | 1781@12V | Tape and Reel | 5 | LFPAK | FPAK | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMEG2010AEB/DG,115
Diode Schottky 1A 2-Pin SC-79 T/R
|
|
NXP Semiconductors | Rectifiers | 2 | SC-79 | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF5014H-500MHZ Trans RF MOSFET N-CH 125V 3-Pin NI-360H-2SB Each |
|
NXP Semiconductors | 射频 MOSFETs | MOSFET | GaN | N | Single | Enhancement | 1 | Pulse | 125 | 0 | 2.3 | 232000 | 51@50V | 18 | 1 | 125(Typ) | 2700 | Each | 3 | NI-360H-2SB | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1203,115
Trans RF MOSFET N-CH 10V 0.03A 6-Pin TSSOP T/R
|
|
NXP Semiconductors | 射频 MOSFETs | N | Dual Dual Gate | Enhancement | 2 | 10 | 6 | 200 | 0.03 | 2.6@5V@Gate 1|3@5V@Gate 2 | 32.5@Amp A|34@Amp B | 7 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MRFG35002N6T1
High Reliability RF FET IC
|
|
NXP Semiconductors | 射频 MOSFETs | Tape and Reel | 4 | PLD-1.5 | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE8VP8600HR5
Trans RF MOSFET N-CH 115V 5-Pin NI-1230H T/R
|
$199.73
每个
|
NXP Semiconductors | 射频 MOSFETs | N | Dual Common Source | Enhancement | 2 | OFDM | 115 | 10 | 2.3 | 1250000 | 452@50V | 21 | 470 | 140(Typ) | 860 | Tape and Reel | 5 | NI-1230H | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZV55-B9V1,115
Diode Zener Single 9.1V 2% 500mW 2-Pin Mini-MELF T/R
|
|
NXP Semiconductors | 齐纳二极管 | Voltage Regulator | Single | 9.1 | 2% | 5 | 0.9 | 0.5 | 15 | 500 | 150 | Tape and Reel | 2 | Mini-MELF | MELF | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX79-B4V7,133
Diode Zener Single 4.7V 2% 500mW 2-Pin ALF Ammo
|
|
NXP Semiconductors | 齐纳二极管 | Voltage Regulator | Single | 4.7 | 2% | 5 | 0.9 | 3 | 80 | 500 | 300 | Ammo | 2 | ALF | DO | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX1K80H-27MHZ
Trans RF MOSFET N-CH 179V 5-Pin NI-1230H
|
从 $1,968.75 到 $2,067.99
每个
|
NXP Semiconductors | 射频 MOSFETs | MOSFET | N | Dual Common Source | Enhancement | 2 | CW | 179 | 10 | 2247000 | 760@65V | 27.8 | 1.8 | 1800(Typ) | 400 | 5 | NI-1230H | No | No | No | No | 3B992 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX884-B30,315
Zener Diode Single 30V 2% 80Ohm 250mW Automotive AEC-Q101 2-Pin DFN T/R
|
|
NXP Semiconductors | 齐纳二极管 | Voltage Regulator | Single | 30 | 2% | 2 | 0.9 | 0.05 | 80 | 250 | 250 | 50 | Tape and Reel | 2 | DFN | DFN | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
PBSS4240TVL
Trans GP BJT NPN 40V 2A 480mW 3-Pin SOT-23 T/R
|
|
NXP Semiconductors | 通用双极型晶体管 | NPN | Bipolar Small Signal | Single | 40 | 40 | 1 | 5 | 1.1@200mA@2A | 2 | 417 | 480 | 120 to 200|200 to 300|300 to 500 | 350@100mA@2V|300@500mA@2V|300@1A@2V|150@2A@2V | 0.07@1mA@100mA|0.1@50mA@500mA|0.18@15mA@750mA|0.18@50mA@1A|0.32@200mA@2A | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | No | EAR99 | Yes | No |