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MRF8S18120HSR3|NXP|limage
MRF8S18120HSR3|NXP|simage
射频 MOSFETs

MRF8S18120HSR3

Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R

NXP Semiconductors
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant
  • 美国出口管制分类ECCN编码
    5A991g.
  • 环保无铅
    Obsolete
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Mode of Operation
    GSM|GSM EDGE
  • Maximum Drain-Source Voltage (V)
    65
  • Maximum Gate-Source Voltage (V)
    10
  • Maximum VSWR
    7
  • Maximum Output Power (W)
    72(Typ)
  • Typical Power Gain (dB)
    18.2
  • Maximum Frequency (MHz)
    1880
  • Minimum Frequency (MHz)
    1805
  • Typical Drain Efficiency (%)
    49.8
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    225
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    4.32(Max) mm
  • Package Width
    9.91(Max) mm
  • Package Length
    20.7(Max) mm
  • PCB changed
    3
  • Supplier Package
    NI-780S
  • Pin Count
    3

文档和资源

数据表
设计资源