Infineon Technologies AG Diodes, Transistors and Thyristors
| 型号 | 价格 | 库存 | 供应商 | 类别 | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Surge Current Rating - (A) | Material | Diode Type | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Minimum Frequency - (MHz) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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AUIRF4905STRL
Trans MOSFET P-CH Si 55V 70A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
|
库存
493
$6.08
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | P | Enhancement | 1 | 55 | ±20 | 4 | 70 | 120@10V | 120 | 3500@25V | 170000 | 20@10V | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDK16G120C5XTMA1
Diode Schottky SiC 1.2KV 40A 3-Pin(2+Tab) D2PAK T/R
|
库存
927
从 $7.15 到 $7.35
每个
|
Infineon Technologies AG | Rectifiers | Schottky Diode | SiC | Single Dual Cathode | 1200 | 40 | 140 | 1.95@16A | 80 | 730(Typ) | 250000 | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7739L1TRPBF
Trans MOSFET N-CH Si 40V 46A 15-Pin Direct-FET L8 T/R
|
库存
3,988
从 $2.44 到 $5.79
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single Hex Drain Octal Source | N | Enhancement | 1 | 40 | ±20 | 4 | 46 | 220@10V | 40 | 220 | 11880@25V | 3800 | 1@10V | 0.7@10V | Tape and Reel | 15 | Direct-FET L8 | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG65R022M1HXTMA1
Trans MOSFET N-CH SiC 650V 64A 8-Pin(7+Tab) TO-263 T/R
|
库存
288
从 $9.424 到 $10.065
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | Single Hex Source | N | Enhancement | 1 | 650 | 23 | 64 | 67@18V | 2288@400V | 300000 | 30@18V | Tape and Reel | 8 | TO-263 | TO | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT65R190CFD7XTMA1
Trans MOSFET N-CH 700V 16A 9-Pin(8+Tab) HSOF T/R
|
库存
2,000
从 $1.2266 到 $0.487
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Seven Source | N | Enhancement | 1 | 700 | 20 | 16 | 22@10V | 22 | 1044@400V | 106000 | 190@10V | Tape and Reel | 9 | HSOF | SO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IQD009N06NM5SCATMA1
Trans MOSFET N-CH 60V 42A 8-Pin WHSON EP T/R
|
库存
100
从 $2.276 到 $2.778
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 60 | 20 | 42 | 120@10V | 120 | 9000@30V | 3000 | 0.9@10V | 8 | WHSON EP | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPTC034N15NM6ATMA1
Trans MOSFET N-CH 150V 22A 16-Pin HDSOP EP T/R
|
库存
1,780
从 $2.263 到 $3.618
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Octal Drain Seven Source | N | Enhancement | 1 | 150 | 20 | 22 | 69@10V | 69 | 4900@75V | 3800 | 3.2@15V | 16 | HDSOP EP | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0906NSATMA1
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
|
库存
5,028
从 $0.1431 到 $0.2997
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 30 | ±20 | 2 | 18 | 6.7@4.5V|13@10V | 50 | 20 | 13 | 870@15V | 330 | 2500 | 4.5@10V | 3.8@10V|5.1@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZ120R220M1HXKSA1
Trans MOSFET N-CH SiC 1.2KV 13A 4-Pin(4+Tab) TO-247 Tube
|
库存
35
从 $4.72 到 $6.48
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | Single Dual Source | N | Enhancement | 1 | 1200 | 18 | 13 | 8.5@18V | 289@800V | 75000 | 294@18V | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD90P03P404ATMA2
Trans MOSFET P-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Automotive AECQ
|
库存
423
从 $0.8568 到 $1.3475
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | P | Enhancement | 1 | 30 | ±20 | 4 | 90 | 100@10V | 1.1 | 100 | 7900@25V | 137000 | 4.5@10V | 3.6@10V | Tape and Reel | 3 | DPAK | TO | No | Yes | Yes | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP15R12KE3GBPSA1
Trans IGBT Module N-CH 1200V 25A 105W 24-Pin Tray
|
库存
15
$118.89
每个
|
Infineon Technologies AG | IGBT 模块 | Hex | N | ±20 | 1200 | 25 | 105 | 24 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GS0650111LTRXUMA1 Trans MOSFET N-CH GaN 650V 11A 8-Pin VSON EP T/R |
库存
1,854
从 $2.94 到 $5.23
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | GaN | Single Quad Drain | N | Enhancement | 1 | 650 | 7 | 11 | 2.2@6V | 70@400V | 190@6V | 8 | VSON EP | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUCN04S7L019ATMA1
Trans MOSFET N-CH 40V 144A 8-Pin TDSON EP T/R Automotive AEC-Q101
|
库存
1,291
从 $0.3971 到 $0.634
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 40 | ±16 | 144 | 29@10V | 29 | 1929@20V | 75000 | 1.92@10V | Tape and Reel | 8 | TDSON EP | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC847CE6327HTSA1
Trans GP BJT NPN 45V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
|
库存
121,155
从 $0.0424 到 $0.2604
每个
|
Infineon Technologies AG | 通用双极型晶体管 | NPN | Bipolar Small Signal | Si | Single | 45 | 50 | 1 | 6 | 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | 0.1 | 420@2mA@5V | 300 to 500 | 9 | 0.25@0.5mA@10mA|0.6@5mA@100mA | 0.95 | 330 | 4 | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD70N10S3L12ATMA1
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
|
库存
14,802
从 $0.947 到 $2.6497
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 100 | ±20 | 2.4 | 70 | 59@10V | 1.2 | 59 | 4270@25V | 125000 | 11.5@10V | 9.6@10V|11.7@4.5V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLS3036TRL7PP
Trans MOSFET N-CH Si 60V 300A 7-Pin(6+Tab) D2PAK T/R
|
库存
800
$1.2312
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single Quint Source | N | Enhancement | 1 | 60 | ±16 | 2.5 | 300 | 110@4.5V | 40 | 0.4 | 11270@50V | 1025 | 380000 | 1.9@10V | 1.5@10V|1.7@4.5V | Tape and Reel | 7 | D2PAK | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS300R17OE4PBOSA1 Trench and Field Stop IGBT Module |
库存
40
从 $416.7614 到 $340.19
每个
|
Infineon Technologies AG | IGBT 模块 | 29 | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IPD85P04P4L06ATMA2
Trans MOSFET P-CH 40V 85A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
|
库存
2,500
$0.5828
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | P | Enhancement | 1 | 40 | 5 | 2.2 | 85 | 80@10V | 1.7 | 80 | 5060@25V | 88000 | 6.4@10V | Tape and Reel | 3 | DPAK | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPTG007N06NM5ATMA1
OptiMOS™ 5 power MOSFET in TOLG package for higher thermal cycling on board performance
|
库存
1,870
从 $3.84 到 $7.41
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Seven Source | N | Enhancement | 1 | 60 | 20 | 53 | 216@10V | 216 | 16000@30V | 3800 | 0.75@10V | 9 | HSOG | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGB15N65S5ATMA1
Trans IGBT Chip N-CH 650V 35A 105W 3-Pin(2+Tab) D2PAK T/R
|
库存
980
从 $1.34 到 $2.13
每个
|
Infineon Technologies AG | IGBT 芯片 | Trench Stop 5 | Single | N | ±20 | 650 | 35 | 105 | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9952TRPBF
Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC N T/R
|
库存
64,000
从 $0.2512 到 $0.292
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Dual Dual Drain | N|P | Enhancement | 2 | 30 | ±20 | 1(Min) | 3.5@N Channel|2.3@P Channel | 6.9@10V@N Channel|6.1@10V@P Channel | 62.5 | 6.9@N Channel|6.1@P Channel | 190@15V | 120@N Channel|110@P Channel | 2000 | 100@10V@N Channel|250@10V@P Channel | 120@4.5V|80@10V@N Channel|290@4.5V|165@10V@P Channel | Tape and Reel | 8 | SOIC N | SO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKP04N60TXKSA1
Trans IGBT Chip N-CH 600V 8A 42W 3-Pin(3+Tab) TO-220 Tube
|
库存
857
从 $0.3687 到 $0.2442
每个
|
Infineon Technologies AG | IGBT 芯片 | Single | N | ±20 | 600 | 8 | 42 | Tube | 3 | TO-220 | TO | No | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS75R12W2T7BPSA1 Trans IGBT Module N-CH 1200V 75A 33-Pin Tray |
库存
15
从 $47.92 到 $49.63
每个
|
Infineon Technologies AG | IGBT 模块 | Hex | N | ±20 | 1200 | 75 | 33 | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAR6405E6327HTSA1
Diode PIN Attenuator/Switch 150V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R
|
库存
1
$0.0223
每个
|
Infineon Technologies AG | PIN | Attenuator|Switch | Dual Common Cathode | 150 | 100 | 1.35@100mA | 1.1@50mA | 20@1mA | 0.35@20V | HF|MF|SHF|UHF|VHF | 250 | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR3915TRPBF
Trans MOSFET N-CH Si 55V 61A 3-Pin(2+Tab) DPAK T/R
|
库存
91,500
从 $0.5226 到 $1.5347
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 55 | ±16 | 3 | 61 | 61@10V | 50 | 1.3 | 61 | 1870@25V | 2380 | 120000 | 14@10V | 12@10V|14@5V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes |