Infineon Technologies AGSMBT3906E6327HTSA1GP BJT

Trans GP BJT PNP 40V 0.2A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Thanks to Infineon Technologies, your circuit can handle high levels of voltage using the PNP SMBT3906E6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

Totale in stock: 279.000 pezzi

Regional Inventory: 270.000

    Total$705.00Price for 3000

    270.000 in magazzino: disponibili per la spedizione 2 domani

    • (3000)

      disponibili per la spedizione 2 domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2337+
      Manufacturer Lead Time:
      15 settimane
      Country Of origin:
      Austria
      • In Stock: 270.000 pezzi
      • Price: $0.2350
    • (3000)

      disponibili per la spedizione 3 domani

      Ships from:
      Paesi Bassi
      Date Code:
      2320+
      Manufacturer Lead Time:
      15 settimane
      Country Of origin:
      Cina
      • In Stock: 9.000 pezzi
      • Price: $0.2483

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