Infineon Technologies AGSMBT3906E6327HTSA1GP BJT

Trans GP BJT PNP 40V 0.2A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Thanks to Infineon Technologies, your circuit can handle high levels of voltage using the PNP SMBT3906E6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

Total en stock: 279 000 pièces

Regional Inventory: 270 000

    Total$705.00Price for 3000

    270 000 en stock: Livraison en 2 jours

    • (3000)

      Livraison en 2 jours

      Ships from:
      États Unis
      Date Code:
      2337+
      Manufacturer Lead Time:
      15 semaines
      Country Of origin:
      Autriche
      • In Stock: 270 000 pièces
      • Price: $0.2350
    • (3000)

      Livraison en 3 jours

      Ships from:
      Pays Bas
      Date Code:
      2320+
      Manufacturer Lead Time:
      15 semaines
      Country Of origin:
      Chine
      • In Stock: 9 000 pièces
      • Price: $0.2483

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