onsemiNGTB40N60L2WGIGBT Chip
Trans IGBT Chip N-CH 600V 80A 417W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.65 | |
| 80 | |
| 0.2 | |
| 417 | |
| -55 | |
| 175 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 21.34(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.25(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
This NGTB40N60L2WG IGBT transistor from ON Semiconductor is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 417000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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