onsemiNGTB40N60L2WGPuce IGBT
Trans IGBT Chip N-CH 600V 80A 417W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.65 | |
| 80 | |
| 0.2 | |
| 417 | |
| -55 | |
| 175 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 21.34(Max) |
| Largeur du paquet | 5.3(Max) |
| Longueur du paquet | 16.25(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
This NGTB40N60L2WG IGBT transistor from ON Semiconductor is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 417000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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