NexperiaGAN041-650WSBQMOSFETs
Trans MOSFET N-CH GaN 650V 47.2A 3-Pin(3+Tab) TO-247 Tube
Transistor a effetto di campo (FET) di potenza al nitruro di gallio (GaN) di seconda generazione (H2)
FET ad alta potenza: efficienti ed efficaci
Il nuovo GAN041-650WSB viene ad ampliare la gamma al nitruro di gallio di Nexperia, offrendo migliori prestazioni e tutta l’efficienza 80 Plus Titanium, in conformità con i nuovi requisiti UE in fatto di alimentazione per i server.
Caratteristiche principali:
• Bassissima reverse-recovery charge (QRR)
• Gate drive semplice (0 V to +10 V or 12 V)
• Robusto gate oxide (capacità: ±20 V)
• Alta tensione di soglia dei gate (+4 V) per un’ottima immunità ai ritorni di gate
• Bassissima tensione source-drain in modalità reverse
• Capacità di sovratensione transitoria
Applicazioni:
• Convertitori hard-switching e soft-switching per alimentazione industriale e datacom
• PFC Bridgeless Totem Pole
• Inverter solari e sistemi UPS
• Drive per servomotori
Risorse:
Brochure:
• Nexperia GaN FETs - Performance, efficiency, reliability
Whitepaper:
• Power GaN technology: the need for efficient power conversion
• 650 V GaN FET technology delivers the best efficiency, and the robustness
needed for AEC-Q101 qualification
Note applicative:
• Understanding Power GaN FET data sheet parameters
• Circuit design and PCB layout recommendations for GaN FET half bridges
• Probing considerations for fast switching applications
• Power GaN technology: the need for efficient power conversion
Note tecniche:
• An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability
Video:
• Nexperia GaN FETs
• Moving from silicon to GaN: Design considerations - Quick Learning
• How to read a GaN FET datasheet - Quick Learning
• Cascode Vs E-Mode: which to use in your Power GaN FET? - Quick Learning
• Benefits of using power GaN FETs in Solar inverters – Quick Learning
• Using GaN FETs in 80 plus titanium power supply units – Quick Learning
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| GaN | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| -55 to 175 | |
| 47.2 | |
| 41@10V | |
| 22@10V | |
| 1500@400V | |
| 187000 | |
| 17 | |
| 14 | |
| 36 | |
| 14 | |
| -55 | |
| 175 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 21.08(Max) |
| Package Width | 5.16(Max) |
| Package Length | 16.03(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 |
| EDA / CAD Models |
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