onsemiBSV52LT1GGP BJT

Trans GP BJT NPN 12V 0.1A 300mW 3-Pin SOT-23 T/R

The three terminals of this NPN BSV52LT1G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 12 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Import TariffMay apply to this part

9.000 pezzi: disponibili per la spedizione 2 domani

    Total$101.70Price for 3000

    • (3000)

      disponibili per la spedizione 2 domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2528+
      Manufacturer Lead Time:
      42 settimane
      Country Of origin:
      Malaysia
      • In Stock: 9.000 pezzi
      • Price: $0.0339

    Progetta dispositivi medici guidati dall'IA

    White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.