onsemiBSV52LT1GGP BJT

Trans GP BJT NPN 12V 0.1A 300mW 3-Pin SOT-23 T/R

The three terminals of this NPN BSV52LT1G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 12 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Import TariffMay apply to this part

9,000 piezas: Se puede enviar en 2 días

    Total$101.70Price for 3000

    • (3000)

      Se puede enviar en 2 días

      Ships from:
      Estados Unidos de América
      Date Code:
      2528+
      Manufacturer Lead Time:
      42 semanas
      Country Of origin:
      Malaisia
      • In Stock: 9,000 piezas
      • Price: $0.0339

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