ToshibaTW015N65C,S1F | G3 650V SiC-MOSFET TO-247 15mohmMOSFET

3rd Generation SiC MOSFETs

Toshiba's 3rd generation Silicon Carbide (SiC) MOSFETs introduces a selection of both 650V voltage products. In common with 2nd generations, Toshiba's newest generation of MOSFETs include a built-in SiC Schottky Barrier Diode (SBD) with a low forward voltage (VF) of -1.35V (typ.), placed in parallel with the PN diode in the SiC MOSFETs, to suppress fluctuation in RDS(on) thereby enhancing reliability.

Features

• Low on-resistance per unit area (RDS(ON)A)
• Low drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd)
• Low diode forward voltage: VDSF = -1.35 V (typ.) @VGS = -5 V

Applications

• Switching power supplies (servers, data center, communications equipment, etc.)
• EV charging stations
• Photovoltaic inverters
• Uninterruptible power supplies (UPS)