ToshibaTW015N65C,S1F | G3 650V SiC-MOSFET TO-247 15mohmMOSFETs
Trans MOSFET N-CH SiC 650V 100A 3-Pin(3+Tab) TO-247
3rd Generation SiC MOSFETs
Toshiba's 3rd generation Silicon Carbide (SiC) MOSFETs introduces a selection of both 650V voltage products. In common with 2nd generations, Toshiba's newest generation of MOSFETs include a built-in SiC Schottky Barrier Diode (SBD) with a low forward voltage (VF) of -1.35V (typ.), placed in parallel with the PN diode in the SiC MOSFETs, to suppress fluctuation in RDS(on) thereby enhancing reliability.
Features
- Low on-resistance per unit area (RDS(ON)A)
- Low drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd)
- Low diode forward voltage: VDSF = -1.35 V (typ.) @VGS = -5 V
Applications
- Switching power supplies (servers, data center, communications equipment, etc.)
- EV charging stations
- Photovoltaic inverters
- Uninterruptible power supplies (UPS)
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| SiC | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 25 | |
| 175 | |
| 100 | |
| 21@18V | |
| 128@18V | |
| 4850@400V | |
| 342000 | |
| 59 | |
| 79 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 20.95 |
| Package Width | 5.02 |
| Package Length | 15.94 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 |
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