| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 5 | |
| 1430@10V | |
| 16@10V | |
| 16 | |
| 700@25V | |
| 35000 | |
| 11 | |
| 20 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 15 |
| Largeur du paquet | 4.5 |
| Longueur du paquet | 10 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220SIS |
| 3 | |
| Forme de sonde | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the TK5A60D(STA4,Q,M) power MOSFET, developed by Toshiba. Its maximum power dissipation is 35000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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