ToshibaTJ50S06M3L(T6L1,NQMOSFET
Trans MOSFET P-CH Si 60V 50A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| 10 | |
| 3 | |
| 50 | |
| 10000 | |
| 10 | |
| 13.8@10V | |
| 124@10V | |
| 124 | |
| 6290@10V | |
| 90000 | |
| 195 | |
| 77 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 10.3@10V|12@6V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 5.5 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK+ |
| 3 | |
| Forme de sonde | Gull-wing |
Compared to traditional transistors, TJ50S06M3L(T6L1,NQ power MOSFETs, developed by Toshiba, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 90000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes u-mos vi technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.