| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3 | |
| 85 | |
| 100 | |
| 1 | |
| 10.5@10V | |
| 105@10V | |
| 105 | |
| 6550@25V | |
| 250000 | |
| 130 | |
| 90 | |
| 55 | |
| 12 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.01(Max) |
| Largeur du paquet | 4.65(Max) |
| Longueur du paquet | 10.51(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SUP85N10-10-E3 power MOSFET can provide a solution. Its maximum power dissipation is 250000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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