STMicroelectronicsSTU3N80K5MOSFET
Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) IPAK Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 5 | |
| 2.5 | |
| 10000 | |
| 1 | |
| 3500@10V | |
| 3.5@10V | |
| 3.5 | |
| 130@100V | |
| 60000 | |
| -55 | |
| 150 | |
| Industrial | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 6.2(Max) mm |
| Largeur du paquet | 2.4(Max) mm |
| Longueur du paquet | 6.6(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | IPAK |
| 3 | |
| Forme de sonde | Through Hole |
Make an effective common gate amplifier using this STU3N80K5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology.
| EDA / CAD Models |
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