STMicroelectronicsSTN1HNK60MOSFET
Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 0.4 | |
| 8500@10V | |
| 7@10V | |
| 7 | |
| 156@25V | |
| 3300 | |
| 25 | |
| 5 | |
| 19 | |
| 6.5 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.8(Max) |
| Largeur du paquet | 3.5 |
| Longueur du paquet | 6.5 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 | |
| Forme de sonde | Gull-wing |
Compared to traditional transistors, STN1HNK60 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.